High hole mobility (≥500 cm2 V−1 s−1) polycrystalline Ge films on GeO2-coated glass and plastic substrates
Author:
Funder
Japan Society for the Promotion of Science
Murata Science Foundation
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/12/i=1/a=015508/pdf
Reference37 articles.
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4. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
5. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
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