High-performance InAlN/GaN HEMTs on silicon substrate with high f T × L g
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab3e29/pdf
Reference58 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
3. InAlN/GaN HEMTs: a first insight into technological optimization
4. Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
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1. RF Performance Augmentation Using DG-InAlN/GaN HEMT;IEEE Transactions on Electron Devices;2024-09
2. First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding;physica status solidi (a);2024-05-15
3. Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique;physica status solidi (a);2024-05-08
4. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing;Solid-State Electronics;2024-03
5. Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications;Chinese Physics B;2023-11-01
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