Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability-Reference-Cited by-同舟云学术

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Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability

Published:2019-05-14 Issue:6 Volume:12 Page:066501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Shen Feiyu,Hao Ronghui,Song Liang,Chen Fu,Yu Guohao,Zhang Xiaodong,Fan Yaming,Lin Fujiang,Cai Yong,Zhang Baoshun

Funder

Key Industry Technology Innovation Program of Suzhou

National Natural Science Foundation of China

Key Research and Development Program of Jiangsu Province

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab1cfa/pdf

Reference21 articles.

1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

4. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Threshold Voltage With ZrO₂/HfO₂ Gate Dielectric and CF₄ Plasma Treatment on AlGaN/GaN HEMT;IEEE Electron Device Letters;2024-07

2. Research Progress and Development Prospects of Enhanced GaN HEMTs;Crystals;2023-06-04

3. Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction;IEEE Access;2023

4. Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-04-30

5. Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment;IEEE Transactions on Electron Devices;2022-01

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