Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical undercut etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab028d/pdf
Reference19 articles.
1. Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes
2. Flip-chip blue LEDs grown on $(20\bar{2}1)$ bulk GaN substrates utilizing photoelectrochemical etching for substrate removal
3. Smooth n-type GaN surfaces by photoenhanced wet etching
4. An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology
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1. InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release;Semiconductor Science and Technology;2023-03-31
2. Progress in GaN Single Crystals: HVPE Growth and Doping;Journal of Inorganic Materials;2023
3. Study on Mechanical Cleavage Mechanism of GaAs via Anisotropic Stress Field and Experiments;IEEE Transactions on Semiconductor Manufacturing;2022-11
4. Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well;Japanese Journal of Applied Physics;2021-04-15
5. Smooth GaN membranes by polarization-assisted electrochemical etching;Applied Physics Letters;2021-02-08
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