Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma-Reference-Cited by-同舟云学术

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Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

Published:2012-10-01 Issue:10S Volume:51 Page:10NA09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamada Takahiro,Ohmi Hiromasa,Okamoto Kohei,Kakiuchi Hiroaki,Yasutake Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-grade Si Using Subatmospheric-pressure H2 Plasma

2. Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport

3. Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

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1. High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas;Solid State Phenomena;2023-05-25

2. The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes;Nanomaterials;2022-05-11

3. Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa;Journal of Vacuum Science & Technology B;2022-05

4. Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma;Materials Science in Semiconductor Processing;2021-07

5. Thermal stress modelling of diamond on GaN/III-Nitride membranes;Carbon;2021-04

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