Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing-Reference-Cited by-同舟云学术

Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

Published:2012-06-01 Issue:6R Volume:51 Page:065701
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jevasuwan Wipakorn,Urabe Yuji,Maeda Tatsuro,Miyata Noriyuki,Yasuda Tetsuji,Ohtake Akihiro,Yamada Hisashi,Hata Masahiko,Lee Sunghoon,Hoshii Takuya,Takenaka Mitsuru,Takagi Shinichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

3. Interface states model for III–V oxide interfaces

4. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

5. Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

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