Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing-Reference-Cited by-同舟云学术

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Published:2012-08-01 Issue:8S1 Volume:51 Page:08HD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maeda Kenji,Obama Shinji,Tamura Hitoshi,Miya Go,Izawa Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. 450 mm dual frequency capacitively coupled plasma sources: Conventional, graded, and segmented electrodes

2. Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge

3. Plasma Characteristics of 450 mm Diameter Ferrite-Enhanced Inductively Coupled Plasma Source

4. Effect of Excitation Frequency on the Spatial Distributions of a Surface Wave Plasma

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