Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Laser‐Assisted Photoelectrochemical Etching of n‐type Beta ‐ SiC
2. Broad‐Area Photoelectrochemical Etching of n‐Type Beta ‐ SiC
3. Direct observation of porous SiC formed by anodization in HF
4. Characterization of nanocrystallites in porousp‐type 6H‐SiC
5. Photoelectrochemical etching of n-type 4H silicon carbide
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis of carbon films by electrochemical etching of SiC with hydrofluoric acid in nonaqueous solvents;Carbon;2014-05
2. Influence of the anodic etching current density on the morphology of the porous SiC layer;AIP Advances;2014-03
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