Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications-Reference-Cited by-同舟云学术

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Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Published:2012-01-01 Issue:1R Volume:51 Page:011101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiang Chen-Kuo,Wu Chien-Hung,Liu Chin-Chien,Lin Jin-Fu,Yang Chien-Lun,Wu Jiun-Yuan,Wang Shui-Jinn

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference29 articles.

1. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

2. Impact of metal–oxide gate dielectric on minority carrier lifetime in silicon

3. Hafnium and zirconium silicates for advanced gate dielectrics

4. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS

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1. Effects of thermal treatment and fluoride ion doping on surface and catalytic properties of NiO–ZrO2 catalysts;Materials Science-Poland;2016-03-01

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