Water-Related Hole Traps at Thermally Grown GeO2–Ge Interface-Reference-Cited by-同舟云学术

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Water-Related Hole Traps at Thermally Grown GeO2–Ge Interface

Published:2012-04-01 Issue:4S Volume:51 Page:04DA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oniki Yusuke,Ueno Tomo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. (Invited) Past, Present and Future: SiGe and CMOS Transistor Scaling

2. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy;Journal of Applied Physics;2016-09-07

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