Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=3/a=031301/pdf
Reference50 articles.
1. Charge pumping in MOS devices
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
4. Determination of interface trap capture cross sections using three-level charge pumping
5. Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
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