Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts-Reference-Cited by-同舟云学术

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

Published:2017-07-06 Issue:8S2 Volume:56 Page:08MB14
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Xin Zheng,Ling Zhi Peng,Nandakumar Naomi,Kaur Gurleen,Ke Cangming,Liao Baochen,Aberle Armin G.,Stangl Rolf

Funder

Economic Development Board - Singapore

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=8S2/a=08MB14/pdf

Reference30 articles.

1. Modelling the PERC structure for industrial quality silicon

2. Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers

3. Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance

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