Control of La-doped Pb(Zr,Ti)O3crystalline orientation and its influence on the properties of ferroelectric random access memory-Reference-Cited by-同舟云学术

Control of La-doped Pb(Zr,Ti)O3crystalline orientation and its influence on the properties of ferroelectric random access memory

Published:2017-09-25 Issue:10S Volume:56 Page:10PF14
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Wensheng,Nomura Kenji,Yamaguchi Hideshi,Nakamura Ko,Eshita Takashi,Ozawa Soichiro,Takai Kazuaki,Mihara Satoru,Hikosaka Yukinobu,Hamada Makoto,Kataoka Yuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=10S/a=10PF14/pdf

Reference50 articles.

1. Ferroelectric Memories

2. Fabrication and characterization of ferroelectric-gate thin-film transistors with an amorphous oxide semiconductor, amorphous In–Ga–Zn–O

3. Thickness dependence of piezoelectric properties of BiFeO3films fabricated using rf magnetron sputtering system

4. Comparison of effective transverse piezoelectric coefficientse31,fof Pb(Zr,Ti)O3thin films between direct and converse piezoelectric effects

5. Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking

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