Achieving high ON/OFF ratio and good stability in organic nonvolatile resistive memory devices with polyisocyanide bearing oligothiophene-Reference-Cited by-同舟云学术

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Achieving high ON/OFF ratio and good stability in organic nonvolatile resistive memory devices with polyisocyanide bearing oligothiophene

Published:2016-02-15 Issue:3S2 Volume:55 Page:03DC10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakuragawa Yasushi,Takagi Yugaku,Ikai Tomoyuki,Maeda Katsuhiro,Dao Toan Thanh,Sakai Heisuke,Murata Hideyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=3S2/a=03DC10/pdf

Reference35 articles.

1. Overview of organic memory devices

2. Review of Emerging New Solid-State Non-Volatile Memories

3. Polymer memristor for information storage and neuromorphic applications

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

5. Nonvolatile Memory Elements Based on Organic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Memory Structure with Different Control Gates;Advanced Electronic Materials;2018-05-17

2. Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers;Journal of Materials Chemistry C;2018

3. Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model;Journal of Computational Electronics;2017-12-07

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