Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

Published:2016-04-14 Issue:5S Volume:55 Page:05FK05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nanjo Takuma,Imai Akifumi,Kurahashi Kenichiro,Matsuda Takashi,Suita Muneyoshi,Yagyu Eiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FK05/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap;Micromachines;2023-03-29

2. Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx;Journal of Physics D: Applied Physics;2020-10-22

3. A novel model of avalanche current generation in the GaN HEMT equivalent circuit;Journal of Computational Electronics;2020-02-12

4. Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

5. Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs;physica status solidi (a);2017-09-29

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