AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010achieved by ozone pretreatment and using ozone oxidant for Al2O3gate insulator-Reference-Cited by-同舟云学术

AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010achieved by ozone pretreatment and using ozone oxidant for Al2O3gate insulator

Published:2016-11-11 Issue:12 Volume:55 Page:120305
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tokuda Hirokuni,Asubar Joel T.,Kuzuhara Masaaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=12/a=120305/pdf

Reference31 articles.

1. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

3. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

4. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

5. AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

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