Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N2/Ar inductively coupled plasma: Effect of CF4/CH2F2mixing ratio
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=10/a=106201/pdf
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