Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

Published:2018-05-02 Issue:6 Volume:57 Page:061301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Aoi,Nishio Johji,Iijima Ryosuke,Ota Chiharu,Goryu Akihiro,Miyazato Masaki,Ryo Mina,Shinohe Takashi,Miyajima Masaaki,Kato Tomohisa,Yonezawa Yoshiyuki,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=6/a=061301/pdf

Reference30 articles.

1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

3. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

4. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

5. Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes

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