Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy-Reference-Cited by-同舟云学术

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Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

Published:2017-12-08 Issue:1S Volume:57 Page:01AD03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bae Sung Geun,Jeon Injun,Jeon Hunsoo,Kim Kyoung Hwa,Yang Min,Yi Sam Nyung,Lee Jae Hak,Ahn Hyung Soo,Yu Young Moon,Sawaki Nobuhiko,Kim Suck-Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=1S/a=01AD03/pdf

Reference31 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

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1. Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source;Light-Emitting Devices, Materials, and Applications XXVII;2023-03-14

2. Chlorine-Assisted Growth of Epitaxial InGaN and AlGaN Crystals at Low Temperatures Using Plasma-Enhanced Chemical Vapor Deposition;Crystal Growth & Design;2022-12-21

3. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows;Nanomaterials;2020-12-23

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