Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8/a=080305/pdf
Reference44 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface
3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
4. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
5. Distribution of donor states on etched surface of AlGaN/GaN heterostructures
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