Ferroelectric properties of undoped HfO2 directly deposited on Si substrates by RF magnetron sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=11S/a=11UF09/pdf
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3. Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers
4. Ferroelectricity in hafnium oxide thin films
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3. Effect of SiO2 Interfacial Layer Reduction on MFSFET With 5 nm-Thick Ferroelectric Nondoped HfO2 by Deposition Rate Control;IEEE Transactions on Semiconductor Manufacturing;2023-11
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