Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
32 articles.
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1. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
2. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
3. Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device;Japanese Journal of Applied Physics;2023-10-01
4. The Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward Biasing;Defect and Diffusion Forum;2023-05-31
5. S-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFs;Defect and Diffusion Forum;2023-05-31