Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
34 articles.
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1. Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer;Journal of Crystal Growth;2024-12
2. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06
3. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
4. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
5. Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device;Japanese Journal of Applied Physics;2023-10-01