Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature-Reference-Cited by-同舟云学术

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Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

Published:2017-11-24 Issue:2S1 Volume:57 Page:02BA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohno Yutaka,Yoshida Hideto,Takeda Seiji,Liang Jianbo,Shigekawa Naoteru

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2S1/a=02BA01/pdf

Reference30 articles.

1. The realistic energy yield potential of GaAs-on-Si tandem solar cells: a theoretical case study

2. Potential and Activities of III-V/Si Tandem Solar Cells

3. The GaAs/GaAs/Si solar cell – Towards current matching in an integrated two terminal tandem

4. Gallium arsenide and other compound semiconductors on silicon

5. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

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1. Direct Bonding of Diamond and Dissimilar Materials for Fabricating High Performace Power Devices;Topics in Applied Physics;2024

2. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes;Small;2023-11-14

3. Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process;Japanese Journal of Applied Physics;2022-11-14

4. Plasma-activated GaAs/Si wafer bonding with high mechanical strength and electrical conductivity;Materials Science in Semiconductor Processing;2022-06

5. Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding;Japanese Journal of Applied Physics;2022-04-01

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