AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=9/a=096502/pdf
Reference23 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. GaN Power Transistors on Si Substrates for Switching Applications
3. Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs
4. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
5. AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz
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