PL properties and defects of SnS layers based on n-type buffer layers/p-type SnS structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab0e4a/pdf
Reference30 articles.
1. Optical spectra and energy band structure of layer-type AIVBVI compounds
2. Overcoming Efficiency Limitations of SnS-Based Solar Cells
3. Defect levels in SnS thin films prepared using chemical spray pyrolysis
4. Unveiling the defect levels in SnS thin films for photovoltaic applications using photoluminescence technique
5. Effect of Sb dopant on the structural, optical and electrical properties of SnS thin films by spray pyrolysis technique
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1. Influence of Cd, S and Na atoms on photoluminescence in tin sulfide thin films;Japanese Journal of Applied Physics;2022-11-14
2. Current status of n-type SnS: paving the way for SnS homojunction solar cells;Journal of Physics: Energy;2022-09-29
3. Effect of Ar and H2 mixture gas on SnS thin films deposited by radio frequency (RF) magnetron sputtering;Thin Solid Films;2022-08
4. Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates;Japanese Journal of Applied Physics;2022-01-21
5. Impact of in/ex situ annealing and reaction temperature on structural, optical and electrical properties of SnS thin films;Journal of Molecular Structure;2021-10
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