Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures-Reference-Cited by-同舟云学术

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Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

Published:2019-07-10 Issue:SI Volume:58 Page:SIIB22
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takada Noriharu,Taoka Noriyuki,Ohta Akio,Yamamoto Taishi,Truyen Nguyen Xuan,Yamada Hisashi,Takahashi Tokio,Ikeda Mitsuhisa,Makihara Katsunori,Shimizu Mitsuaki,Miyazaki Seiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab26ac/pdf

Reference30 articles.

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

2. Recent progress of GaN power devices for automotive applications

3. GaN transistors on Si for switching and high-frequency applications

4. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

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