Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC
Author:
Funder
JSPS KAKENHI Grant-in-Aid for Scientific Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab2e2e/pdf
Reference73 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
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3. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
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3. Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion;Computational Materials Science;2024-01
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