Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs-Reference-Cited by-同舟云学术

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Published:2019-02-25 Issue:SB Volume:58 Page:SBBD08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chao Der-Sheng,Shih Hua-Yu,Jiang Jheng-Yi,Huang Chih-Fang,Chiang Ching-Yu,Ku Ching-Shun,Yen Cheng-Tyng,Lee Lurng-Sheng,Hsu Fu-Jen,Chu Kuo-Ting,Hung Chien-Chung,Lee Chwan-Ying

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBD08/pdf

Reference31 articles.

1. Optimum semiconductors for high-power electronics

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

3. Silicon carbide and its use as a radiation detector material

4. Radiation hardness of gallium nitride

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