Influence of neutron irradiation parameter and annealing temperature on neutron-transmutation-doped heteroepitaxial GaN film-Reference-Cited by-同舟云学术

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Influence of neutron irradiation parameter and annealing temperature on neutron-transmutation-doped heteroepitaxial GaN film

Published:2024-05 Issue: Volume:550 Page:165303
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chung Yueh-Chun^ORCID,Chao Der-Sheng^ORCID,Liang Jenq-Horng

Funder

National Science and Technology Council

Publisher

Elsevier BV

Reference27 articles.

1. Thermal Neutron Transmutation Doping of GaN Semiconductors;Barber;Sci. Rep.,2020

2. A Review of Transmutation Doping in Silicon;Meese;IEEE Trans. Nucl. Sci.,1979

3. Neutron transmutation doping of silicon and other semiconducting materials;Hoffmann;J. Appl. Phys.,1981

4. Neutron transmutation doping effects in GaN;Polyakov;J. Vac. Sci. Technol. B,2010

5. Preparation of Uniform Resistivity n-type Silicon by Nuclear Transmutation;Tanenbaum;J. Electrochem. Soc.,1961

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