Fabricating GaN-based LEDs on (−2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Fabricating GaN-based LEDs on (−2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Published:2019-09-19 Issue:10 Volume:58 Page:100908
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lan Yu-Pin^ORCID,Chen Yen-Chun,Yeh Yi-Yun,Hung Shun-Ming

Funder

Ministry of Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab3ff5/pdf

Reference36 articles.

1. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

2. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

3. High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

4. High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer

5. UV-enhanced CO sensing using Ga2O3-based nanorod arrays at elevated temperature

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