High-performance InGaAs FinFETs with raised source/drain extensions
Author:
Funder
REMINDER EU Project
INSIGHT H2020
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab2c97/pdf
Reference30 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. III–V compound semiconductor transistors—from planar to nanowire structures
3. High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications
4. Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
5. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
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