AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors
Author:
Funder
Ministry of Education - Singapore
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab1391/pdf
Reference29 articles.
1. Road Traffic Noise, Air Pollutants, and the Prevalence of Cardiovascular Disease in Taichung, Taiwan
2. ${\rm NO}_{2}$ Detection With AlGaN/GaN 2DEG Channels for Air Quality Monitoring
3. Very sensitive porous silicon NO2 sensor
4. Thermal Flow Sensors for Harsh Environments
5. Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review
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1. Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state;Journal of Colloid and Interface Science;2024-09
2. High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere;International Journal of Hydrogen Energy;2024-02
3. Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device;Lecture Notes in Electrical Engineering;2024
4. Physics and Chemistry of Nitrogen Dioxide (No2) Adsorption on Gallium Nitride (Gan) Surface and its Interaction with the Yellow-Luminescence-Associated Surface State;2024
5. Sensitivity Analysis of Al0.3Ga0.7N/GaN Dielectric Modulated MOSHEMT Biosensor;ECS Journal of Solid State Science and Technology;2023-06-01
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