GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces-Reference-Cited by-同舟云学术

GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces

Published:2019-04-16 Issue:SC Volume:58 Page:SCCC01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Muranaga Wataru,Akagi Takanobu,Fuwa Ryouta,Yoshida Shotaro,Ogimoto Junichiro,Akatsuka Yasuto,Iwayama Sho,Takeuchi Tetsuya,Kamiyama Satoshi,Iwaya Motoaki,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SCCC01/pdf

Reference30 articles.

1. Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

2. Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature

3. Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

4. Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

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