Characterization of non-uniform InGaN alloys: spatial localization of carriers and optical properties
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCC03/pdf
Reference31 articles.
1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. White light emitting diodes with super-high luminous efficacy
5. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations
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1. Impact of random alloy fluctuations on the carrier distribution in multicolor ( In , Ga ) N / GaN quantum well systems;Physical Review Applied;2024-02-27
2. Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs;Journal of Luminescence;2023-05
3. Effect of in content on thermoelectric performance of In Ga1−N alloys: Hybrid density functional theory study based on realistic models;Journal of Physics and Chemistry of Solids;2021-07
4. Simulating random alloy effects in III-nitride light emitting diodes;Journal of Applied Physics;2020-07-28
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