Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems-Reference-Cited by-同舟云学术

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Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems

Published:2020-01-31 Issue:SG Volume:59 Page:SGGB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jang Won Douk,Yoon Young Jun,Cho Min Su,Jung Jun Hyeok,Lee Sang Ho,Jang Jaewon,Bae Jin-Hyuk,Kang In Man

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab65d2/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries;Results in Physics;2024-08

2. Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries;Nanomaterials;2023-07-07

3. Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect;Japanese Journal of Applied Physics;2023-01-10

4. Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure;IEEE Access;2021

5. Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon;Applied Physics A;2020-11-17

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