Plasma assisted-MBE of GaN and AlN on graphene buffer layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab124b/pdf
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1. Nobel Lecture: Fascinated journeys into blue light
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3. High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz
4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
5. MOVPE growth of GaN on Si(111) substrates
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1. Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets;Materials;2024-02-07
2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
3. Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study;Applied Sciences;2022-11-13
4. Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN;Journal of Applied Physics;2021-11-14
5. Low-temperaturevan der waals epitaxy of GaN films on graphene through AlN buffer by plasma-assisted molecular beam epitaxy;Journal of Alloys and Compounds;2021-02
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