Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBH02/pdf
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1. Design of ion-implanted MOSFET's with very small physical dimensions
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