Analysis of Physical and Electrical Properties of NiTe2 Single Crystal Grown via Molten Salt Flux Method-Reference-Cited by-同舟云学术

Analysis of Physical and Electrical Properties of NiTe2 Single Crystal Grown via Molten Salt Flux Method

Published:2023-03-11 Issue:5 Volume:19 Page:452-461
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Je Yeonjin,Kim Eunjeong,Binh Nguyen Vu,Kim Hyeongtae,Cho Su-yeon,Lee Do-Hyeon,Kwon Mi Ji,Choi Moonhee,Lee Jae Hyun,Nam Woo Hyun,Lee Younki,Cho Jung Young,Park Jun Hong^ORCID

Funder

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s13391-023-00419-2.pdf

Reference45 articles.

1. Herbig, C., Zhang, C., Mujid, F., Xie, S., Pedramrazi, Z., Park, J., Crommie, M.F.: Local electronic properties of coherent single-layer WS2/WSe2 lateral heterostructures. Nano Lett. 21, 2363–2369 (2021)

2. Oshima, S., Toyoda, M., Saito, S.: Geometrical and electronic properties of unstrained and strained transition metal dichalcogenide nanotubes. Phys. Rev. Mater. 4, 026004 (2020)

3. Bilc, D.I., Benea, D., Pop, V., Ghosez, P., Verstraete, M.J.: Electronic and thermoelectric properties of transition-metal dichalcogenides. J. Phys. Chem. C 125, 27084–27097 (2021)

4. Das, P., Di Sante, D., Cilento, F., Bigi, C., Kopic, D., Soranzio, D., Sterzi, A., Krieger, J., Vobornik, I., Fujii, J.: Electronic properties of candidate type-II Weyl semimetal WTe2. A review perspective. Electron. Struct. 1, 014003 (2019)

5. Das, S., Sebastian, A., Pop, E., McClellan, C.J., Franklin, A.D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A.V., Appenzeller, J.: Transistors based on two-dimensiona materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021)

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