A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz-Reference-Cited by-同舟云学术

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A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Published:2019-05-20 Issue:SC Volume:58 Page:SCCD19
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Tongde,An Sining,Bergsten Johan,He Simon,Rorsman Niklas

Funder

VINNOVA

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab09d9/pdf

Reference33 articles.

1. Analysis of the Survivability of GaN Low-Noise Amplifiers

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated GaN Power Detector for High Power Millimeter-Wave Applications;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21

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