Development of a III-nitride electro-optical modulator for UV–vis-Reference-Cited by-同舟云学术

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Development of a III-nitride electro-optical modulator for UV–vis

Published:2019-04-17 Issue:SC Volume:58 Page:SCCC04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wieben Jens,Beckmann Carsten,Yacoub Hady,Vescan Andrei,Kalisch Holger

Funder

Bundesministerium für Bildung und Forschung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SCCC04/pdf

Reference31 articles.

1. Vertical electro-absorption modulator design and its integration in a VCSEL

2. The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C

3. Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures

4. Optical constants of epitaxial AlGaN films and their temperature dependence

5. Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis;AIP Advances;2023-12-01

2. Structural characterization of polycrystalline thin films by X-ray diffraction techniques;Journal of Materials Science: Materials in Electronics;2021-01

3. Design and analysis of electro-optic modulators based on high contrast gratings in AlGaN/GaN heterostructures;Semiconductor Science and Technology;2020-10-27

4. Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies;Semiconductor Science and Technology;2020-08-12

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