Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1341212
Reference30 articles.
1. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
2. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
3. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films
4. Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
5. Optical properties of hexagonal GaN
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