Author:
Akiyama Shinya,Kondo Masahiro,Wada Leona,Horio Kazushige
Abstract
Abstract
We perform a numerical analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped buffer layer with only a deep acceptor as a deep level and study how its density N
DA and the length of field-plate L
FP affect the breakdown voltage V
br. The calculated characteristics usually show abrupt increases in gate and drain currents due to impact ionization, resulting in breakdown. But, in some cases, V
br is limited by current flow through the buffer, and this current is higher for lower N
DA. Therefore, V
br becomes higher for higher N
DA. V
br takes a maximum value at some L
FP, and the highest average electric field between gate and drain becomes about 3.2 MV cm−1 when the breakdown occurs.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献