Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCD09/pdf
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1. Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
2. GaN smart power devices and integrated circuits
3. Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
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1. Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages;Applied Physics Letters;2023-12-18
2. Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors;physica status solidi (a);2023-07-04
3. Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films;Japanese Journal of Applied Physics;2023-04-12
4. Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs;Materials Science Forum;2022-05-31
5. 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer;Nanoscale Research Letters;2022-01-15
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