Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
2. High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation
3. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
4. Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] Passivation
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1. Interfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices;Micro & Nano Letters;2013-11
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