Bottom Electrode Modification of ZrO2Resistive Switching Memory Device with Au Nanodots
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
1. Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
2. Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO[sub 2] Thin Films
3. Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
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1. Low-bias resistive switching in BaTiO3/Al2O3/ITO structures with various thicknesses of Al2O3 layer;Applied Physics A;2021-06
2. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications;ACS Applied Materials & Interfaces;2017-02-10
3. Resistive switching in polymethyl methacrylate thin films;Organic Electronics;2016-02
4. Resistive switching phenomena: A review of statistical physics approaches;Applied Physics Reviews;2015-08-31
5. Tunable Power Switching in Nonvolatile Flexible Memory Devices Based on Graphene Oxide Embedded with ZnO Nanorods;The Journal of Physical Chemistry C;2014-09-09
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