Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

Published:2012-02-01 Issue:2S Volume:51 Page:02BF04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawamura Yumi,Tani Mai,Hattori Nozomu,Miyatake Naomasa,Horita Masahiro,Ishikawa Yasuaki,Uraoka Yukiharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Thin Film Transistors

2. Status of Si thin film transistors

3. Fermi-level-dependent mobility-lifetime product ina-Si: H

4. Investigating the stability of zinc oxide thin film transistors

5. A comprehensive review of ZnO materials and devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window;Vacuum;2021-08

2. From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications;Small;2020-04-28

3. Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables;Materials Science and Technology;2016-06-29

4. Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation;Japanese Journal of Applied Physics;2014-04-15

5. Atomic layer deposition of ZnO: a review;Semiconductor Science and Technology;2014-02-26

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