Channel Shortening Phenomenon Due to Redox Reaction in a Lateral Direction on In–Ga–Zn–O Thin Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
2. Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination
3. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
4. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
5. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 7‐2: Invited Paper: A 40 nm Gate Length Surrounding Gate Vertical‐Channel FET Using Thermally Stable In‐Al‐Zn‐O Channel for 3D CMOS‐LSI Applications;SID Symposium Digest of Technical Papers;2021-05
2. Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier;Journal of Alloys and Compounds;2021-04
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