1. Material characteristics and applications of transparent amorphous oxide semiconductors;Kamiya T.;NPG Asia Mater,2010
2. Highly Reliable BEOL-Transistor with Oxygen-controlled InGaZnO and Gate/Drain Offset Design for High/Low Voltage Bridging I/O Operations;Kaneko K.;2011 IEEE International Electron Devices Meeting (IEDM)
3. Experimental demonstration of ferroelectric HfO2 FET with ultrathin-body IGZO for high-density and low-power memory application;Mo F.;2019 Symposium on VLSI Technology: Digest of Technical papers
4. 3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm;Oota M.;2019 IEEE International Electron Devices Meeting (IEDM)
5. Channel shortening phenomenon due to redox reaction in a lateral direction on In-Ga-Zn-O thin film transistors;Kitakado H.;Jpn. J. Appl. Phys.,2012