Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Electrical noise and RTS fluctuations in advanced CMOS devices
2. 1/f noise in CMOS transistors for analog applications
3. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
4. Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology
5. Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors
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