Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation;Thin Solid Films;2019-09
2. Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations;AIP Advances;2016-12
3. Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110);Diamond and Related Materials;2016-08
4. Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation;Journal of Applied Physics;2016-03-10
5. Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth;Russian Physics Journal;2014-04
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